Download Applications and Devices Part B by R.K. Willardson and Albert C. Beer (Eds.) PDF

By R.K. Willardson and Albert C. Beer (Eds.)

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Although we discussed the characteristics of the Read diode only at w = n, the theory can be used for lower frequencies. Evans was able to show that a closed-form solution is possible when the transit angle is very sma1L2’ He used his approximate solution in analyzing a certain type of Si IMPATT diode which showed oscillation at lower transit angles. h. Numerical Analysis30a The numerical solution of the IMPATT diode equations is essentially to simulate what takes place in the actual diode. We shall discuss three cases which have appeared in the literature: (1) a Si diode with a relatively narrow avalanche region reported by Scharfetter and Gumme1,28 (2) a Si pvn diode reported by Ward and U d e l ~ o n and , ~ ~( 3 )a Ge diode reported by Johnston et The first two cases deal with moderately-large-amplitude operation of diodes and the third case with very-large-amplitude operation at a relatively low frequency.

21(a). As the avalanche region becomes wider, the frequency range over which the conductance is negative increases and its magnitude decreases. 1 calculated from (46). It is seen that our SIMU-1 behaves almost in the same way. 0704 was chosen so that the conductance of the Read diode at transit angle n is positive above this value. The imaginary part is shown in Fig. 21(b). Except for the 10% unit, SIMU-1, the behavior is more or less the same as the pin unit, SIMU-6. TABLE I1 Structure No. 8 I v (V) 125 162 184 202 229 239 408 T.

7a. After the current has peaked, the voltage drops down ; generated carriers disappear in the time interval comparable to the carrier transit time. As is seen from Fig. 31, the current flows during a very small fraction of one cycle. Although efficiency for this particular oscillation was not quoted, the authors reported that efficiency as high as 14% was obtained in a similar oscillation. Since the dc V-Z curve was not reported, it is not possible to assess how the negative-resistance characteristics are enhanced in the dynamic condition.

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